New patent-pending technology developed by NEO advances X-NAND architecture, allowing 3D NAND flash programming (i.e., data writes) to occur in parallel using fewer planes.

IBM researchers have demonstrated a filesystem-level version of the Rowhammer attack against MLC NAND flash memory.

Micron continues to push the edge when it comes to 3D NAND flash memory by leveraging replacement-gate NAND, which boosts write endurance and power efficiency.

New patent-pending technology developed by NEO advances X-NAND architecture, allowing 3D NAND flash programming (i.e., data writes) to occur in parallel using fewer planes.