A strained germanium epilayer on silicon achieves a record hole mobility, enabling faster low-power electronics and scalable ...
Scientists at the University of Warwick and the National Research Council of Canada have achieved and measured the highest “hole mobility” ever recorded in a silicon-compatible material.
Scientists at the University of Warwick and the National Research Council of Canada say ...
NTT is pioneering advanced digital solutions, investing heavily in AI, quantum computing, and leveraging global talent for ...
A detail of the cover image for AEM created by University of Arkansas. The GeSn quantum well with Ge barriers sits in the background, while the GeSn quantum well with ordered SiGeSn barriers is in the ...
Chris Allemang from Sandia National Laboratories contributed to research toward improving the performance of certain quantum ...